Abstract: The photoluminescence properties of silicon rich oxide (SRO) and silicon oxynitride (SNO) films were studied. The materials were obtained by the low pressure chemical vapor deposition (LPCVD) technique, with some samples post-treated by Si-implantation and th

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Abstract: Pulsed laser deposition was used to grow LiCoO2 and LiMn2O4 thin films. Crystalline thin films were deposited on silicon at low substrate temperature (300 oC) using an oxygen pressure of 50 mTorr for LiCoO2 and 100 mTorr for LiMn2O4. The structure of these th

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Abstract: Au-ZrO2 thin film samples of around 150 nm thick were prepared by means of sol-gel and dip-dry techniques on glass substrates, from a transparent sol containing ZrOCl2 and HAuCl4. After drying, solid films were obtained. TEM studies showed Au nanoparticles em

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Abstract: Recent results obtained from the Plasma Immersion Ion Implantation (PIII) nitriding process on AISI 304 stainless steel by means of a DC toroidal plasma source of 0.23m and 0.08m major and minor radii, respectively, are reported. Among the main plasma parame

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Resumen: Utilizando el formalismo de la teoría del funcional de la densidad (DFT) con la aproximación del gradiente generalizado (GGA), calculamos las propiedades electrónicas de los nitruros AlN, GaN, InN en su estructura zinc-blenda (ZB)y wurzita (WZ), comparamos co

Abstract: Within the Density Functional Theory (DFT) framework, including the generalized gradient approach (GGA) to the exchange-correlation part of the total energy, we have calculated the electronic properties of the nitrides AlN, GaN and InN in the zin-blende (ZB)

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Resumen: Se presenta una teoría rigurosa de la dispersión de haces Gaussianos a incidencia normal y oblicua por una rejilla finita en una pantalla conductora, de espesor cero y con sustrato metálico. El sustrato puede ser el vacío o un conductor. Se considera el caso

Abstract: A rigorous scattering theory of oblique incident Gaussian beams by a finite grating is presented. The grating is pearsed on a thin screen of infinite conductivity with a metallic substrate. The substrate can be the void or a conductor. We consider the case of

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Resumen: En el presente trabajo se estudian las características estructurales de películas de InGaP acopladas reticularmente a substratos GaAs. Las películas fueron crecidas por el método epitaxial de la fase líquida (LPE por sus siglas en inglés) utilizando un bote

Abstract: We have studied the structural characteristics of InGaP films lattice-matched to GaAs substrates. The films were grown by the liquid phase epitaxy technique using a graphite boat in a conventional horizontal reactor. The morphology of the film surface was s

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Resumen: Un latex magnético fue preparado, mediante la polimerización en miniemulsión de metilmetacrilato (MMA) y de un fluido magnético preparado para este trabajo. Una fase orgánica fue preparada dispersando el fluido magnético en el monómero con bis (2 ethyhexyl) s

Abstract: A magnetic latex was prepared, via the miniemulsion polymerization of methylmetacrylate (MMA) amid a magnetic fluid previously prepared for this work. An organic phase was prepared by dispersing the magnetic fluid into the MMA monomer with bis (2 ethylhexyl)

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Resumen: Existen algunos materiales que cambian su índice de refracción al hacerles incidir un campo óptico (luz), estos materiales tienen la naturaleza de generar diversas distribuciones de este índice dependiendo de la condición inicial que se considere. En este tra

Abstract: It is well know that some optical materials to change his refractive index when these are exposed to the light, depending on the particular conditions they can generate several distributions of refractive index. In this work we presented an experimental perio

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